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Quantum phenomena in small semiconductor structures and devices
Author(s) -
Berggren K.F.
Publication year - 1988
Publication title -
international journal of quantum chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.484
H-Index - 105
eISSN - 1097-461X
pISSN - 0020-7608
DOI - 10.1002/qua.560330306
Subject(s) - semiconductor , molecular beam epitaxy , chemical vapor deposition , quantum , nanotechnology , optoelectronics , atomic units , materials science , engineering physics , epitaxy , chemistry , physics , quantum mechanics , layer (electronics)
The ability to artificially structure new semiconductor materials on an atomic scale, using advanced crystal growth methods such as molecular beam epitaxy and metal organic chemical vapor deposition, has led recently to the observation of new physical phenomena as well as the creation of entirely new classes of devices based on band gap and wave function engineering. In these lectures an elementary introduction is given to the quantum aspects of these new structures.