Dielectric response to an acceptor ion in a Ga 1− x A1 x As/GaAs/Ga 1− x A1 x As quantum well

We consider the dielectric response to an acceptor ion placed at the center of a GaAs quantum well of finite depth and calculate the binding energy of heavy‐hole and light‐hole acceptor atoms as a function of the width of the well. We compare our values with those we have calculated from a hydrogenic approximation and find that consideration of the dielectric response of the GaAs quantum well leads to deviations with respect to the hydrogenic approximation. Specifically, we find that our binding energies are larger in magnitude than those calculated from the hydrogenic approximation. We further find that the acceptor ion binding a heavy hole is much more affected by the dielectric response of the GaAs quantum well than the acceptor ion that binds a light hole.