z-logo
Premium
On the possibility of negative U systems for transition metals impurities in semiconductors
Author(s) -
Mota Ronaldo,
Fazzio Adalberto
Publication year - 1987
Publication title -
international journal of quantum chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.484
H-Index - 105
eISSN - 1097-461X
pISSN - 0020-7608
DOI - 10.1002/qua.560320710
Subject(s) - impurity , semiconductor , condensed matter physics , transition metal , formalism (music) , anderson impurity model , lattice (music) , electron , materials science , chemistry , chemical physics , physics , quantum mechanics , catalysis , art , musical , biochemistry , acoustics , visual arts , optoelectronics
Using the Haldane–Anderson formalism we study the possibility of obtaining a negative U system for transition metal impurities in semiconductors. We propose, even without including electron‐lattice interaction, the occurrence of negative‐U as a consequence of the impurity‐host hybridization to explain why some oxidation states would be missing in these systems.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here