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Intersubband transition energies in quantum wells in n ‐Type GaAs‐Al x Ga 1 ‐ x As heterostructures
Author(s) -
Gomes V. M. S.,
Oliveira G. M. G.,
Leite J. R.,
Chaves A. S.
Publication year - 1987
Publication title -
international journal of quantum chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.484
H-Index - 105
eISSN - 1097-461X
pISSN - 0020-7608
DOI - 10.1002/qua.560320603
Subject(s) - heterojunction , quantum well , electron , condensed matter physics , fermi gas , atomic physics , fermi level , electron density , chemistry , quantum , energy level splitting , wave function , physics , quantum mechanics , laser
Calculations of the single‐particle intersubband transition energies are carried out for a two‐dimensional electron gas confined in quantum well in GaAs‐Al x Ga 1 ‐ x As heterostructures. A variety of samples is considered with different quantum well widths, electron densities, and aluminum concentrations. The calculations are based on a simultaneous self‐consistent solution of Poisson and Schrödinger equations, including exchange‐correlation effects. The results are compared with experimental data. In most cases the calculated subband energy spacings as well as the Fermi energies are in good agreement with the available experimental data. In addition, for a particular single asymmetric quantum well, the shift of the electron‐hole recombination energy is calculated as a function of the two‐dimensional electron density. The results emphasize the importance of the exchange‐correlation effects as have been observed experimentally.