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Formation of sub‐bands and the 3D to 2D transition of electrons in a GaAs MESFET
Author(s) -
Berggren K. F.,
Widlund B. L.
Publication year - 2009
Publication title -
international journal of quantum chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.484
H-Index - 105
eISSN - 1097-461X
pISSN - 0020-7608
DOI - 10.1002/qua.560280851
Subject(s) - mesfet , electron , condensed matter physics , materials science , chemistry , physics , quantum mechanics , voltage , transistor , field effect transistor
Abstract The formation of sub‐bands in a special GaAs MESFET is studied by means of different theoretical models. Evidence for the existence of subbands is discussed in terms of electrical transport.