Investigation of the convergence of an expansion of the screening‐charge density for impurity ions in semiconductors | Zendy

Csavinszky P. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Investigation of the convergence of an expansion of the screening‐charge density for impurity ions in semiconductors

Author(s) -

Csavinszky P.

Publication year - 1977

Publication title -

international journal of quantum chemistry

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.484

H-Index - 105

eISSN - 1097-461X

pISSN - 0020-7608

DOI - 10.1002/qua.560120210

Subject(s) - impurity , convergence (economics) , semiconductor , series (stratigraphy) , degeneracy (biology) , ion , charge (physics) , condensed matter physics , poisson's equation , physics , dirac (video compression format) , quantum mechanics , nonlinear system , point (geometry) , mathematics , bioinformatics , geometry , neutrino , economics , biology , economic growth , paleontology

In theories of the potential of an impurity ion in semiconductors, the common starting point is an expansion of the Fermi–Dirac integral ℱ 1/2 appearing in the screening‐charge density. In the present paper, a formal test of the convergence of the series for ℱ 1/2 is carried out. The results show that, in the physically important limits of complete degeneracy and complete nondegeneracy, respectively, the series for ℱ 1/2 do converge. This establishes the validity of nonlinear Poisson equations for the impurity‐ion potential, which can be solved approximately by making use of a variational principle.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research