Premium
The effect of silicon doping on the geometrical structures, stability, and electronic and spectral properties of magnesium clusters: DFT study of SiMg n ( n = 1‐12) clusters
Author(s) -
Zhu BenChao,
Zhang Shuai,
Zeng Lu
Publication year - 2020
Publication title -
international journal of quantum chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.484
H-Index - 105
eISSN - 1097-461X
pISSN - 0020-7608
DOI - 10.1002/qua.26143
Subject(s) - cluster (spacecraft) , ionization energy , density functional theory , electronic structure , binding energy , atom (system on chip) , silicon , electron affinity (data page) , magnesium , chemistry , atomic physics , doping , charge (physics) , atomic orbital , crystallography , molecular orbital , computational chemistry , fragmentation (computing) , ionization , molecular physics , materials science , electron , molecule , ion , physics , organic chemistry , optoelectronics , computer science , operating system , quantum mechanics , embedded system , programming language
Abstract Using the density functional theory (DFT) method at the B3LYP /6−311G (D) level, we studied how silicon doping affects the geometrical structure, stability, and electronic and spectral properties of magnesium clusters. The stable isomers of SiMg n ( n = 1‐12) clusters were calculated by searching numerous initial configurations using the CALYPSO program. The geometrical structure optimization shows that most stable SiMg n ( n = 3‐12) clusters are three‐dimensional. In addition, geometrical structure growth patterns show that some structures of SiMg n clusters can be directly formed by replacing one Mg atom in the corresponding Mg n + 1 cluster with one silicon atom, such as SiMg 8 and Mg 9 clusters. The stability of SiMg n clusters is analyzed by calculating the average binding energy, fragmentation energy, and second‐order energy difference. The results show that SiMg n clusters with n = 5 and 8 are more stable than others. MO contents analysis show that the Si 3 p ‐orbitals and Mg 3 s ‐orbital are mainly responsible for the stability of these two clusters. The results of the natural charge population (NCP) and natural electronic configure (NEC) analysis of the electronic properties reveal that the charges in SiMg n ( n = 1‐12) clusters transfer from magnesium atoms to silicon frame, and electronic charge distributions are primarily governed by s ‐ and p ‐orbital interactions. In addition, the Vertical ionization potential (VIP), vertical electron affinity (VEA), and chemical hardness of ground sates of SiMg n ( n = 1‐12) clusters were studied in detail and compared with the experimental results. The conclusions show that the chemical hardness of most SiMg n clusters are lower than that of pure Mg n + 1 ( n = 1‐12) clusters, except for n = 1 and 8. This indicates that the doping of silicon atom can always reduce the chemical hardness of pure magnesium clusters. Finally, the infrared and Raman spectral properties of SiMg 5 and SiMg 8 clusters were calculated and discussed in detail.