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Electronic and magnetic properties of all 3 d transition‐metal‐doped ZnO monolayers
Author(s) -
Ren Juan,
Zhang Hong,
Cheng Xinlu
Publication year - 2013
Publication title -
international journal of quantum chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.484
H-Index - 105
eISSN - 1097-461X
pISSN - 0020-7608
DOI - 10.1002/qua.24442
Subject(s) - monolayer , pseudopotential , magnetic moment , magnetism , transition metal , density functional theory , doping , materials science , spintronics , condensed matter physics , atomic orbital , magnetization , ferromagnetism , magnetic semiconductor , electronic structure , crystallography , nanotechnology , chemistry , computational chemistry , magnetic field , physics , optoelectronics , electron , biochemistry , quantum mechanics , catalysis
Stable geometries, electronic structures, and magnetic properties of the ZnO monolayer doped with 3d transition‐metal (TM) (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu) atoms substituting the cation Zn have been investigated using first‐principles pseudopotential plane wave method within density functional theory (DFT). It is found that these nine atomic species can be effectively doped in the ZnO monolayer with formation energies ranging from −6.319 to −0.132 eV. Furthermore, electronic structures and magnetic properties of ZnO monolayer can be modified by such doping. The results show that the doping of Cr, Mn, Fe, Co, Ni, and Cu atoms can induce magnetization, while no magnetism is observed when Sc, Ti, and V atoms are doped into the ZnO monolayer. The magnetic moment is mainly due to the strong p–d mixing of O and TM (Cr, Mn, Fe, Co, Ni, and Cu) orbitals. These results are potentially useful for spintronic applications and the development of magnetic nanostructures. © 2013 Wiley Periodicals, Inc.