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Impurity cluster effects in high‐ and low‐doping semiconductor materials
Author(s) -
Ferreira Da Silva A.
Publication year - 2011
Publication title -
international journal of quantum chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.484
H-Index - 105
eISSN - 1097-461X
pISSN - 0020-7608
DOI - 10.1002/qua.22633
Subject(s) - impurity , doping , cluster (spacecraft) , nonmetal , semiconductor , materials science , condensed matter physics , metal , absorption (acoustics) , transition metal , chemistry , optoelectronics , physics , organic chemistry , computer science , metallurgy , composite material , programming language , catalysis , biochemistry
The cluster‐like impurity effect in semiconductor materials as Si, GaN, GaAs, and 4HSiC for impurity concentrations spanning the metallic to the insulating regimes, i.e., from high‐ to low‐doping concentration, has been investigated at low temperature. To metallic regime a critical impurity concentration for metal–nonmetal transition is estimated from a highly correlated system by a doubly doped H 2 + ‐like different impurity pairs. For insulating regime, the absorption measurements reveal low‐energy absorption peaks identified as electronic transitions in three‐donor clusters. The many‐particle correlation via a multi‐configurational self‐consistent field model is used in the calculation. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem, 2010