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Laser field dependence of intersubband transition in inverse V‐shaped quantum wells
Author(s) -
Burileanu L. M.,
Niculescu E. C.
Publication year - 2011
Publication title -
international journal of quantum chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.484
H-Index - 105
eISSN - 1097-461X
pISSN - 0020-7608
DOI - 10.1002/qua.22463
Subject(s) - quantum well , excited state , laser , electron , electric field , oscillator strength , atomic physics , physics , wave function , quantum , atomic electron transition , inverse , polarization (electrochemistry) , chemistry , condensed matter physics , quantum mechanics , spectral line , geometry , mathematics
The electron energy levels and the envelope wave functions in inverse GaAs/AlGaAs V‐shaped quantum wells (QWs) are calculated using the transfer matrix method. The influence of applied electric and laser fields on the electronic distribution is investigated. In studied systems, a laser‐induced attenuation for anomalous electric polarization of the excited state is found. Also, an oscillator strength increasing under high‐frequency laser radiation is obtained. The results presented in this article can be useful for novel device applications based on the intersubband transitions of electrons. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem, 2011