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Allowed transitions in silicon isoelectronic ions
Author(s) -
Saha B.,
Mukherjee T. K.,
Das A. K.,
Mukherjee P. K.
Publication year - 2001
Publication title -
international journal of quantum chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.484
H-Index - 105
eISSN - 1097-461X
pISSN - 0020-7608
DOI - 10.1002/qua.1101
Subject(s) - excited state , atomic physics , ion , principal quantum number , chemistry , dipole , quantum number , electric dipole transition , quantum , physics , quantum mechanics , magnetic dipole , quantum dissipation
Dipole‐allowed transitions have been studied for the first few members of the Si isoelectronic sequence. Transition energies, oscillator strengths, transition probabilities and quantum defect values have been estimated for the low‐ and high‐lying excited states of s and d symmetries up to the principal quantum number n =7 for these 3 p open shell ions from P + to Cr 10+ . Time‐dependent coupled Hartree–Fock (TDCHF) theory has been utilized to calculate such transition properties. Most of the results for transition energies, oscillator strengths, and transition probabilities for higher excited states are new. The transition energies for low‐lying excited states agree well with experimental data wherever available. © 2001 John Wiley & Sons, Inc. Int J Quantum Chem, 2001