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ESD protection elements during hbm stress tests—further numerical and experimental results
Author(s) -
Russ Christian,
Gieser Horst,
Verhaege Koen
Publication year - 1995
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680110413
Subject(s) - snapback , electrostatic discharge , transmission line , transient (computer programming) , engineering , stress (linguistics) , reliability engineering , electronic engineering , electrical engineering , computer science , voltage , linguistics , philosophy , operating system
Correlation problems for HBM‐ESD testing result from the complex interaction between device and tester. The HBM stresses of different well‐characterized testers 1.2 are applied to protection elements. By means of circuit simulations and in situ measurements, snapback and second breakdown during HBM are investigated. For fast transient events, a new transmission line approach of the tester improves the correlation between experiment and simulation.