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Write/erase degradation and disturb effects in source‐side injection flash eeprom devices
Author(s) -
Wellekens Dirk,
van Houdt Jan,
Groeseneken Guido,
Maes Herman E.,
Faraone Lorenzo
Publication year - 1995
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680110405
Subject(s) - eeprom , flash (photography) , degradation (telecommunications) , eprom , flash memory , non volatile memory , materials science , optoelectronics , erasure , electrical engineering , computer science , embedded system , engineering , physics , optics , programming language
An in‐depth analysis of the write/erase degradation of source‐side injection flash EEPROM devices is performed, which reveals two mechanisms underlying this degradation: a decrease of the charge per cycle on the floating gate, accompanied by the series effect of oxide and interface charges locally trapped above the channel. In addition, the main disturb effects are characterized and shown to be non‐critical for reliable cell operation.