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Upper voltage and temperature limitations of stress conditions for relevant dielectric breakdown projections
Author(s) -
Vollertsen R.P.,
Abadeer W. W.
Publication year - 1995
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680110404
Subject(s) - stress (linguistics) , materials science , dielectric , dielectric strength , reliability engineering , electronic engineering , engineering , optoelectronics , philosophy , linguistics
Parameters and their dependence on stress conditions are discussed using a three‐dimensional model, including all possible degrees of freedom. The results, applied to breakdown data for 10 nm oxide, reveal the upper limits for stress conditions. A physical explanation for the upper voltage limit is presented. Furthermore, the thermal activation energy and the slope of lifetime distributions (e.g., the shape factor β of the Weibull distribution) are investigated as functions of electric field and temperature. The results are compared to available literature data.