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On the Astm electromigration test structure applied to Al–1%Si/TiN/Ti bamboo metal lines
Author(s) -
de Munari Ilaria,
Vanzi Massimo,
Scorzoni Andrea,
Fantini Fausto
Publication year - 1995
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680110106
Subject(s) - electromigration , tin , materials science , bamboo , wafer , metallurgy , nist , metal , composite material , optoelectronics , computer science , natural language processing
The applicability of NIST‐ASTM electromigration test patterns when used to test ‘bamboo’ metal lines is discussed. Wafer level tests on passivated and non‐passivated samples employing the Al–1%Si/TiN/Ti metallization scheme were performed. Straight metal lines 1000 μm long and 0·9 μm or 1·4 μm wide were tested at two different current densities. j = 3 MA cm 2 and j = 4·5 MA/cm 2 , at constant stress temperature ( T = 230·C). The failures mainly occurred in the end‐segment areas and hindered the evaluation of the electromigration resistance of the ‘bamboo’ test lines. In order to avoid this problems, completely different test patterns based on different approaches must be designed.