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The use of early resistance and early tcr changes to predict the reliability of on‐chip interconnects
Author(s) -
D'haeger V.,
Stulens H.,
de Ceuninck W.,
de Schepper L.,
Tielemans L.,
Gallopyn G.,
de Pauw P.,
Stals L. M.
Publication year - 1994
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680100410
Subject(s) - electromigration , electrical resistivity and conductivity , materials science , reliability (semiconductor) , electrical resistance and conductance , mean time between failures , relaxation (psychology) , current density , chip , electronic engineering , composite material , electrical engineering , thermodynamics , failure rate , reliability engineering , engineering , physics , psychology , social psychology , power (physics) , quantum mechanics
A new method is presented to evaluate the resistance to electromigration of on‐chip interconnects. The method is based on the high resolution in‐situ electrical resistance technique. During high temperature and high current density stress measurements, two types of processes occur simultaneously: structure‐relaxation and electromigration. In order to study these processes separately, the experimental conditions are adapted. The electrical resistance and TCR is measured before and after structure‐relaxation and/or electromigration. Using Matthiessen's rule, it is possible to separate the contribution of the resistivity variation from the variation in geometry. The first process causes a decrease of the resistivity, whereas the second causes an increase. The influence of Cu‐addition and deposition temperature is also investigated. Correlation of the resistivity variations with conventional mean time to failure (MTTF) data is demonstrated. As a consequence, with our short‐time method, predictions of the resistance to electromigration of on‐chip interconnects can be made after typical test times of 24 to 48 hours.