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Computer simulation of fast electromigration lifetime determination techniques
Author(s) -
Gilfedder T. H.,
Jones B. K.
Publication year - 1993
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680090608
Subject(s) - electromigration , trace (psycholinguistics) , reliability engineering , process (computing) , reliability (semiconductor) , computer science , materials science , nuclear engineering , engineering , thermodynamics , composite material , physics , philosophy , linguistics , power (physics) , operating system
The electromigration lifetime and the activation energy of the process are often determined by highly accelerated or fast methods. Some of these common methods have been simulated using a crack model of the defect. The TRACE, BEM and WIJET methods are considered and suggestions are made about the optimum test strategy.