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Localization and characterization of latch‐up sensitive areas using a laser beam: Influence on design rules of ICs in CMOS technology
Author(s) -
Fouillat P.,
Danto Y.,
Dom J. P.
Publication year - 1993
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680090604
Subject(s) - cmos , characterization (materials science) , laser beams , laser , current (fluid) , beam (structure) , optoelectronics , materials science , high resolution , electrical engineering , electronic engineering , engineering , optics , physics , nanotechnology , remote sensing , geology
The technique of ‘scanning’ with a laser beam permits a localization of latch‐up sites in CMOS technology with a resolution less than one micron. Electrical simulations correlated to experimental curves of ‘supply current’ versus ‘photo‐induced current’ offer a good evaluation of the predominant parameters of the parasitic structure.