Localization and characterization of latch‐up sensitive areas using a laser beam: Influence on design rules of ICs in CMOS technology | Zendy

Fouillat P. | Zendy; Danto Y. | Zendy; Dom J. P. | Zendy

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Localization and characterization of latch‐up sensitive areas using a laser beam: Influence on design rules of ICs in CMOS technology

Author(s) -

Fouillat P.,

Danto Y.,

Dom J. P.

Publication year - 1993

Publication title -

quality and reliability engineering international

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.913

H-Index - 62

eISSN - 1099-1638

pISSN - 0748-8017

DOI - 10.1002/qre.4680090604

Subject(s) - cmos , characterization (materials science) , laser beams , laser , current (fluid) , beam (structure) , optoelectronics , materials science , high resolution , electrical engineering , electronic engineering , engineering , optics , physics , nanotechnology , remote sensing , geology

The technique of ‘scanning’ with a laser beam permits a localization of latch‐up sites in CMOS technology with a resolution less than one micron. Electrical simulations correlated to experimental curves of ‘supply current’ versus ‘photo‐induced current’ offer a good evaluation of the predominant parameters of the parasitic structure.

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