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Very high temperature test of InP‐based laser diodes
Author(s) -
Tesauri Monica,
Chiorboli Giovanni,
Cova Paolo,
Fantini Fausto,
Magistrali Fabrizio,
Sala Danila
Publication year - 1993
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680090425
Subject(s) - reliability (semiconductor) , materials science , laser , optoelectronics , diode , semiconductor laser theory , active layer , layer (electronics) , reliability engineering , optics , composite material , engineering , physics , thermodynamics , power (physics) , thin film transistor
The reliability of DHBC and DFB InGaAsP/InP lasers has been evaluated by means of high‐temperature operating life tests between 80 and 110°C. The main failure mechanisms have been related to the stability of the active layer, thus demonstrating the applicability of these high temperatures to the evaluation of InP‐based lasers.