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Limitations of oxide breakdown accelerated testing for reliability simulation
Author(s) -
Nafría M.,
Suñé J.,
Aymerich X.
Publication year - 1993
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680090416
Subject(s) - reliability (semiconductor) , reliability engineering , capacitor , oxide , materials science , computer science , engineering , electrical engineering , physics , thermodynamics , voltage , power (physics) , metallurgy
Thin‐oxide MOS capacitors are analysed to reveal the limitations of oxide breakdown accelerated testing used for reliability simulations at the circuit level. The results show that the probability of failure can only be extrapolated from the tails of the statistical distributions.