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Electromigration, models and atomistic interpretation
Author(s) -
Kirchheim Reiner
Publication year - 1993
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680090408
Subject(s) - electromigration , vacancy defect , thermal diffusivity , grain boundary , materials science , diffusion , texture (cosmology) , condensed matter physics , annihilation , microstructure , physics , thermodynamics , metallurgy , computer science , nuclear physics , composite material , artificial intelligence , image (mathematics)
Fundamental aspects of electromigration in Al‐lines of integrated circuits are reviewed, including vacancy diffusion, vacancy generation and annihilation. The latter processes give rise to the generation of mechanical stresses. Various models and computer simulations on electromigration are compiled and their influence on the parameters in Black's equations is discussed. The beneficial effect of a (111) texture is explained by the concomitant formation of a large number of tilt grain boundaries and the low diffusivity of atoms perpendicular to the tilt axis of these boundaries.