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A comparative reliability assessment of 750nm, 1060nm and 1300nm high power surface light emitting diodes
Author(s) -
Lindsay C. E.
Publication year - 1993
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680090212
Subject(s) - reliability (semiconductor) , diode , power (physics) , light emitting diode , materials science , optoelectronics , degradation (telecommunications) , heterojunction , reliability engineering , computer science , engineering , electronic engineering , physics , quantum mechanics
Abstract A comparative study of the reliability of high power double heterojunction surface light emitting diodes (SLEDs) operating at 750nm, 1060nm and 1300nm is reported. Data analysis from 9500 hours of fully automated life testing concludes that extremely reliable devices can be produced. Degradation and failure characteristics specific to each operating wavelength are described and related to structural and performance data on each device batch. Median life and activation energies are calculated.