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GaAs MMIC reliability studies
Author(s) -
Anderson W. T.,
Roussos J. A.,
Christianson K. A.
Publication year - 1992
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680080320
Subject(s) - monolithic microwave integrated circuit , mean time between failures , integrated circuit , passivation , microwave , materials science , electrical engineering , reliability (semiconductor) , failure mode and effects analysis , power (physics) , engineering , electronic engineering , failure rate , reliability engineering , layer (electronics) , telecommunications , cmos , composite material , physics , amplifier , quantum mechanics
Three types of GaAs monolithic microwave integrated circuits (MMICs) were RF high temperature accelerated life tested to determine the median time before failure (MTBF). Life testing was performed under the d.c. bias conditions and RF input power levels the MMICs would be expected to use under actual operating conditions. the accelleration condition was to raise the base‐plate temperature high enough to result in degradation in approximately 1000 hours at the highest test temperature. Because the MMICs were designed for power applications, the input signal level was large enough to cause approximately 1 dB compression. Device failure was defined as a 20 per cent decrease in output power as measured at 125°C, or room temperature when the temperature control system was turned off. Under these conditions the MTBF extrapolated to a channel temperature of 125°C varied between 8 × 10 3 hours and 2 × 10 5 hours depending on the MMIC type. The primary failure mode appeared to be surface leakage currents under the passivation layer.