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ESD induced degradation mechanisms of InGaAsP/InP lasers
Author(s) -
Magistrali F.,
Sala D.,
Salmini G.,
Vanzi M.,
Fantini F.,
Giansante M.,
Zazzetti L.
Publication year - 1992
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680080319
Subject(s) - failure mechanism , degradation (telecommunications) , laser , reliability engineering , materials science , sensitivity (control systems) , mechanism (biology) , optoelectronics , engineering , computer science , electronic engineering , physics , composite material , optics , quantum mechanics
The sensitivity of InGaAsP/InP buried crescent lasers to ESD phenomena was deeply analysed, starting from the need to explain and prevent sudden failures during equipment manufacturing and test. Failure analysis allowed us to localize the degradation, which can be explained by means of a simple phenomenological model; finally a physical model was implemented trying to correlate the results of the failure analysis with the proposed failure mechanism.