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Reliability and degradation of 980 NM InGaAs/GaAs strained quantum well lasers
Author(s) -
Fukuda M.,
Okayasu M.,
Takeshita T.,
Wada M.
Publication year - 1992
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680080318
Subject(s) - optoelectronics , quantum well , laser , materials science , reliability (semiconductor) , gallium arsenide , degradation (telecommunications) , optics , electronic engineering , physics , engineering , power (physics) , quantum mechanics
Degradation behaviours of 980 nm InGaAs/GaAs strained quantum well (QW) lasers are clarified and compared with normal AlGaAdGaAs, InGaAsP/InP and GaAs/GaAs QW lasers. Through various ageing tests, it is confirmed that 980 nm InGaAs/GaAs strained QW lasers are applicable to optical fibre transmission systems where the components are required to be highly reliable.
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