Premium
Electromigration at gold–aluminium interfaces and in thin aluminium tracks
Author(s) -
Vanhecke B.,
de Schepper L.,
de Ceuninck W.,
D'haeger V.,
D.'olieslaeger M.,
Beyne E.,
Stals L.,
Roggen J.
Publication year - 1992
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680080314
Subject(s) - electromigration , aluminium , void (composites) , materials science , metallurgy , composite material , kinetics , metallizing , metal , stress relaxation , current density , creep , physics , quantum mechanics
The in situ method to study accelerated ageing of electronic interconnections under current stress has been applied to (a) Au ball bonds on A11% Si metallization, and (b) thin aluminium tracks. For the Au ball bonds, it has been shown that direct current stresses above 10 8 Am −2 cause electromigration effects at the Au‐Al interface, and that the ageing behaviour depends on the direction of the applied direct current stress. It was also shown that the addition of 1 per cent Cu to the metallization strongly retards void formation, and hence open contact failure. For the thin aluminium tracks, it has been shown that the early stage of electromigration, which can be studied accurately with the in situ technique, is closely related to the stress relaxation within the track. It is therefore concluded that the kinetics of electromigration can only be described if the kinetics of stress relaxation are well understood.