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An extension of the rapid wafer‐level wijet method and its comparison with conventional electromigration testing
Author(s) -
Jeuland F.,
Normandon Ph.,
Lormand G.,
Boudou A.
Publication year - 1992
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680080313
Subject(s) - electromigration , wafer , materials science , reliability (semiconductor) , acceleration , current density , current (fluid) , analytical chemistry (journal) , composite material , electrical engineering , thermodynamics , engineering , optoelectronics , physics , chemistry , chromatography , power (physics) , classical mechanics , quantum mechanics
With an evaluation of the current density acceleration factor N and an improved temperature control, the rapid wafer‐level WIJET electromigration test is extended to the ‘XWIJET’ method. Results for passivated AlSi 1% 1·2 m̈m wide lines are presented and compared with others obtained by conventional electromigration testing. An excellent agreement of the two methods is found for the values of the current density acceleration coefficient N and of the activation energy Q 0 . A difference between the values of the standard deviation of time‐to‐failure distributions obtained with both methods is explained by the competition between two failure modes.