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Reliability of multi‐channel Ga 1− x Al x as high electron mobility transistor (HEMT) integrated circuits
Author(s) -
Christou A.,
Tseng Wen
Publication year - 1991
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680070604
Subject(s) - high electron mobility transistor , reliability (semiconductor) , transistor , channel (broadcasting) , materials science , degradation (telecommunications) , electronic circuit , optoelectronics , electrical engineering , electronic engineering , reliability engineering , computer science , analytical chemistry (journal) , engineering , chemistry , physics , power (physics) , voltage , chromatography , thermodynamics
Abstract The reliability of HEMT ICs has been analysed when they are treated as weakly coupled dual channel systems. The separation distance between the two‐dimensional electron gas channels is the critical parameter which affects reliability. The introduction of deep traps at 0·65 eV has been shown to occur during accelerated life tests. In addition, the HEMT dual channel IC reliability results tend to follow the enhancement mode degradation statistics. All testing was carried out at 12 GHz and at channel temperatures between 130°C and 250°C.