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Reliability and failure analysis of GaAs mesfets on GaAs and Si substrates
Author(s) -
Kornilios N.,
Tsagaraki K.,
Stoemenos J.,
Christou A.
Publication year - 1991
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680070419
Subject(s) - mesfet , reliability (semiconductor) , ohmic contact , materials science , gallium arsenide , optoelectronics , reliability engineering , contact resistance , electrical engineering , composite material , engineering , transistor , field effect transistor , voltage , physics , power (physics) , quantum mechanics , layer (electronics)
Reliability of GaAs MESFET's on GaAs and Si was studied using high‐temperature storage tests. Tested MESFETs were back etched and analysed by SEM, EDX and TEM. The major failure modes have been identified as gate sinking and an increase of ohmic contact resistance through Au particle formation.