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Hot carrier degradation in MOSFETs in the temperature range of 77–300 K
Author(s) -
Maes H. E.,
Heremans P.,
Bellens R.,
Groeseneken G.
Publication year - 1991
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680070418
Subject(s) - degradation (telecommunications) , materials science , atmospheric temperature range , transistor , optoelectronics , mosfet , range (aeronautics) , channel (broadcasting) , electrical engineering , voltage , threshold voltage , electronic engineering , analytical chemistry (journal) , chemistry , engineering , physics , thermodynamics , composite material , chromatography
In this paper the DC hot carrier degradation of n ‐channel and p ‐channel MOSFETs is treated in the temperature range of 77–300 K. A thorough analysis of the degradation mechanisms is made possible by an extensive use of the charge pumping technique for the determination of the interface properties of the MOS devices prior to and after degradation in this temperature range, in addition to the more conventional techniques based on shifts and/or distortions of the current–voltage characteristics. The physical processes responsible for the transistor degradation are identified in each voltage regime for the two types of transistor.