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Evaluation of E 2 PROM data retention by field acceleration
Author(s) -
Lanzoni M.,
Menozzi R.,
Riva C.,
Olivo P.,
Riccò B.
Publication year - 1991
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680070416
Subject(s) - prom , acceleration , data retention , degradation (telecommunications) , field (mathematics) , work (physics) , materials science , electrical engineering , analytical chemistry (journal) , computer science , engineering , computational physics , reliability engineering , chemistry , physics , optoelectronics , mathematics , mechanical engineering , chromatography , pure mathematics , medicine , obstetrics , classical mechanics
This work presents an improved theoretical analysis of the physical mechanisms leading to charge loss from the floating gate of electrically erasable PROMs (E 2 PROMs). The analysis is applied to a simplified model of a FLOTOX cell in order to evaluate data retention characteristics using the applied field as an accelerating factor. A set of experimental results (obtained on virgin as well as on aged cells) is presented and degradation of data retention due to cell aging is examined.