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Reliability critical thermal model for double‐drift IMPATT diodes on diamond heat sinks
Author(s) -
Csanky G.
Publication year - 1990
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/qre.4680060204
Subject(s) - junction temperature , heat sink , diamond , diode , thermal , impatt diode , materials science , reliability (semiconductor) , thermal resistance , optoelectronics , electronic engineering , mechanics , nuclear engineering , thermodynamics , composite material , engineering , physics , power (physics)
A thermal model of double‐drift IMPATT diodes on diamond heat sinks has been developed. The thermal model approximates the temperature‐dependent thermal conductivities of Si and diamond (Type II) by means of simple empirical formulae. The application of the thermal model to three IMPATT diode lots indicates that under life test, junction temperatures are greater than 700°C, and that the metal/Si interface temperatures exceed 500°C. An explanation of the failure mechanism is presented. Designs that result in a lower junction temperature are proposed.