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Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications
Author(s) -
Kim Hyo Jeong,
An Yonghwan,
Jung Yong Chan,
Mohan Jaidah,
Yoo Jeong Gyu,
Kim Young In,
Hernandez-Arriaga Heber,
Kim Harrison Sejoon,
Kim Jiyoung,
Kim Si Joon
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202170020
Subject(s) - fluorite , materials science , ferroelectricity , thermal , electronics , optoelectronics , annealing (glass) , engineering physics , doping , electronic engineering , electrical engineering , engineering , composite material , metallurgy , physics , meteorology , dielectric
In article number 2100028 , Jiyoung Kim, Si Joon Kim, and co‐workers comprehensively review the various factors such as doping effects, deposition method, annealing method and conditions, and substrate material for obtaining fluorite‐structure ferroelectrics with low‐thermal‐budget processes (400 °C or less). These low‐thermal‐budget processes facilitate not only the integration of ferroelectric circuits in the back‐end‐of‐line, but also the applications to flexible and wearable electronics.