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On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications
Author(s) -
Luong Minh Anh,
Agati Marta,
Ratel Ramond Nicolas,
Grisolia Jérémie,
Le Friec Yannick,
Benoit Daniel,
Claverie Alain
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202170015
Subject(s) - materials science , phase change memory , percolation (cognitive psychology) , impurity , diffusion , phase (matter) , phase change , nanotechnology , optoelectronics , engineering physics , chemistry , thermodynamics , physics , layer (electronics) , organic chemistry , neuroscience , biology
Among phase‐change materials, Ge‐rich GeSbTe “alloys” show superior properties that make them suitable for embedded memory applications. In article number 2000471 , Alain Claverie and co‐workers show that these properties result from their tendency to separate and eventually crystallize into distinct Ge and GST phases. Both mechanisms are limited by Ge diffusion and may be slowed down by impurities such as nitrogen. Transport characteristics result from the possible percolation of carriers through these two‐phase materials.