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Evolution of Low‐Frequency Vibrational Modes in Ultrathin GeSbTe Films
Author(s) -
Zallo Eugenio,
Dragoni Daniele,
Zaytseva Yuliya,
Cecchi Stefano,
Borgardt Nikolai I.,
Bernasconi Marco,
Calarco Raffaella
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202170014
Subject(s) - van der waals force , materials science , raman spectroscopy , molecular beam epitaxy , lamella (surface anatomy) , molecular vibration , optoelectronics , layer (electronics) , epitaxy , nanotechnology , molecular physics , optics , chemistry , physics , molecule , composite material , organic chemistry
In article number 2000434 , Eugenio Zallo and co‐workers report a methodology based on the Raman technique for the measurement of the layer number in ultrathin GeSbTe films obtained by molecular beam epitaxy. The experimental and theoretical evolution of the in‐plane low‐frequency vibrational modes of Ge 2 Sb 2 Te 5 from bulk down to a single lamella is demonstrated. The energy shift is mainly related to the weak van der Waals interactions between the layers.