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Diode Laser‐Crystallization for the Formation of Passivating Contacts for Solar Cells
Author(s) -
Gawlik Annett,
Glatthaar Raphael,
Dellith Andrea,
Jia Guobin,
Dellith Jan,
Terheiden Barbara,
Plentz Jonathan
Publication year - 2022
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100537
Subject(s) - materials science , passivation , optoelectronics , diode , solar cell , doping , amorphous solid , wafer , amorphous silicon , silicon , crystallization , layer (electronics) , laser , crystalline silicon , optics , nanotechnology , chemistry , crystallography , physics , organic chemistry
A new method of diode laser treatment of passivating contacts for solar cells application based on electron beam evaporated highly doped amorphous silicon (a‐Si) layers deposited on solar‐grade Czochralski wafers with SiOx tunneling layers is investigated. In a first step, an interface oxide is grown and a highly doped n‐type a‐Si layer is deposited on both sides by electron beam evaporation. In a next step, the laser treatment is applied. Two different scanning speeds of 15 and 20 mm s −1 are used. Electron backscattering diffraction and quasi ‐ steady ‐ state photo conductance measurements indicate that the a‐Si layer can be crystallized without breaking up the thin oxide layer. To determine the best parameters, the lifetime and the implied open‐circuit voltage for each laser power are measured. The first results show a fitted lifetime of 4.06 ms and an implied open‐circuit voltage up to 711 mV after a passivation step.