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Epitaxial Growth of CaMnO 3– y Films on LaAlO 3 ( 11 2 ¯ 0 ) by Pulsed Direct Current Reactive Magnetron Sputtering
Author(s) -
Ekström Erik,
Elsukova Anna,
Grasland Justine,
Palisaitis Justinas,
Ramanath Ganpati,
Persson Per O. Å,
Paul Biplap,
Eriksson Fredrik,
Febvrier Arnaud le,
Eklund Per
Publication year - 2022
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100504
Subject(s) - materials science , substrate (aquarium) , epitaxy , seebeck coefficient , sputtering , sputter deposition , perovskite (structure) , cavity magnetron , x ray photoelectron spectroscopy , electrical resistivity and conductivity , thin film , nanotechnology , crystallography , chemistry , nuclear magnetic resonance , thermal conductivity , physics , composite material , oceanography , layer (electronics) , geology , quantum mechanics
CaMnO 3 is a perovskite with attractive magnetic and thermoelectric properties. CaMnO 3 films are usually grown by pulsed laser deposition or radio frequency magnetron sputtering from ceramic targets. Herein, epitaxial growth of CaMnO 3– y (002) films on a ( 11 2 ¯ 0 ) ‐oriented LaAlO 3 substrate using pulsed direct current reactive magnetron sputtering is demonstrated, which is more suitable for industrial scale depositions. The CaMnO 3– y shows growth with a small in‐plane tilt of <≈0.2° toward the (200) plane of CaMnO 3– y and the ( 1 ¯ 104 ) with respect to the LaAlO 3( 11 2 ¯ 0 ) substrate. X‐ray photoelectron spectroscopy of the electronic core levels shows an oxygen deficiency described by CaMnO 2.58 that yields a lower Seebeck coefficient and a higher electrical resistivity when compared to stoichiometric CaMnO 3 . The LaAlO 3( 11 2 ¯ 0 ) substrate promotes tensile‐strained growth of single crystals. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal antiphase boundaries composed of Ca on Mn sites along <101> and <002>, forming stacking faults.