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Preferential Placement of Aligned Nitrogen Vacancy Centers in Chemical Vapor Deposition Overgrown Diamond Microstructures
Author(s) -
Götze Arne,
Striegler Nico,
Marshall Alastair,
Neumann Philipp,
Giese Christian,
Quellmalz Patricia,
Knittel Peter
Publication year - 2022
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100373
Subject(s) - diamond , chemical vapor deposition , vacancy defect , materials science , electron paramagnetic resonance , microstructure , epitaxy , impurity , substrate (aquarium) , nitrogen , crystallography , layer (electronics) , nanotechnology , chemistry , nuclear magnetic resonance , composite material , physics , oceanography , organic chemistry , geology
The usefulness of nitrogen vacancy (NV) centers in diamond is augmented by a low defect and impurity density in the surrounding host material, and applications benefit from the ability to control the position of the NV centers. Herein, a process to create NV centers on single‐crystalline diamond microstructures by chemical vapor deposition (CVD) is presented. Pyramidal structures with {111} side facets are formed during the intrinsic overgrowth of dry chemically etched cylindrical pillars on a substrate with {100} surface orientation. A thin nitrogen‐doped epitaxial layer is deposited on top of the pyramids resulting in the creation of NV centers exclusively on the {111} pyramid side faces. Optically detected magnetic resonance (ODMR) and spin echo measurements reveal preferential alignment of the NV centers in a single {111} direction and aT 2time of 55 μs . TheT 2time of the NV centers is limited by the surrounding substitutional nitrogen (P1 center) concentration of [P 1 ] = 5 ppm . A low density of other paramagnetic spin noise is detected by double‐electron electron resonance (DEER) measurements.