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Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy
Author(s) -
Sala Elisa M.,
Godsland Max,
Trapalis Aristotelis,
Heffernan Jon
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100283
Subject(s) - metalorganic vapour phase epitaxy , epitaxy , photoluminescence , quantum dot , materials science , optoelectronics , transmission electron microscopy , blueshift , layer (electronics) , wavelength , phase (matter) , nanotechnology , chemistry , organic chemistry
InAs quantum dots (QDs) are grown on bare InP(001) via droplet epitaxy (DE) in metal–organic vapor phase epitaxy (MOVPE). Capping layer engineering, used to control QD size and shape, is explored for DE QDs in MOVPE. The method allows for the tuning of the QD emission over a broad range of wavelengths, ranging from the O‐ to the L‐band. The effect of varying the InP capping layer is investigated optically by macro‐ and micro‐photoluminescence (PL, µPL) and morphologically by transmission electron microscopy (TEM). A strong 500 nm blueshift of the QD emission wavelength is observed when the capping layer is reduced from 20 to 8 nm, which is reflected by a clear size reduction of the buried QDs.