Cr 7 Ge 33 Te 60 /Hf 16 Ge 6 Sb 78  Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory | Zendy

Hua Sicong | Zendy; Xu Zhehao | Zendy; Su Xiao | Zendy; Zhai Jiwei | Zendy; Song Sannian | Zendy; Song Zhitang | Zendy

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Cr 7 Ge 33 Te 60 /Hf 16 Ge 6 Sb 78 Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory

Author(s) -

Hua Sicong,

Xu Zhehao,

Su Xiao,

Zhai Jiwei,

Song Sannian,

Song Zhitang

Publication year - 2021

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.202100222

Subject(s) - superlattice , crystallization , materials science , phase change memory , thin film , phase (matter) , germanium compounds , condensed matter physics , crystallography , germanium , optoelectronics , silicon , nanotechnology , thermodynamics , chemistry , physics , organic chemistry , layer (electronics)

A multilevel phase‐change memory cell that is based on a CrGeTe(CrGT)/HfGeSb(HfGS) superlattice‐like (SLL) structure is proposed. With increasing temperature in resistance–temperature tests, the SLL thin films exhibit a three‐step phase‐change process that corresponds to the crystallization of Sb, GeTe, and CrGeTe. A stable and reversible three‐step phase change is identified as the key characteristic for realizing multilevel storage. This so‐designed multiple‐crystallization SLL structure is a feasible way to increase the storage density.

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