Premium
Cr 7 Ge 33 Te 60 /Hf 16 Ge 6 Sb 78 Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory
Author(s) -
Hua Sicong,
Xu Zhehao,
Su Xiao,
Zhai Jiwei,
Song Sannian,
Song Zhitang
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100222
Subject(s) - superlattice , crystallization , materials science , phase change memory , thin film , phase (matter) , germanium compounds , condensed matter physics , crystallography , germanium , optoelectronics , silicon , nanotechnology , thermodynamics , chemistry , physics , organic chemistry , layer (electronics)
A multilevel phase‐change memory cell that is based on a CrGeTe(CrGT)/HfGeSb(HfGS) superlattice‐like (SLL) structure is proposed. With increasing temperature in resistance–temperature tests, the SLL thin films exhibit a three‐step phase‐change process that corresponds to the crystallization of Sb, GeTe, and CrGeTe. A stable and reversible three‐step phase change is identified as the key characteristic for realizing multilevel storage. This so‐designed multiple‐crystallization SLL structure is a feasible way to increase the storage density.