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p‐Type Doping and Alloying of CuI Thin Films with Selenium
Author(s) -
Storm Philipp,
Bar Michael Sebastian,
Selle Susanne,
von Wenckstern Holger,
Grundmann Marius,
Lorenz Michael
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100214
Subject(s) - selenium , doping , dopant , crystallinity , materials science , analytical chemistry (journal) , solubility , electrical resistivity and conductivity , chemistry , metallurgy , optoelectronics , chromatography , electrical engineering , composite material , engineering
The impact of the intentional selenium doping of CuI thin films is investigated concerning crucial crystalline, electrical and optical properties. For selenium contents in between x ( Se ) = 0.1 at.% and x ( Se ) = 1 at.%, the carrier density can be systematically adjusted by the selenium supply during growth between p = 10 15cm− 3and p = 8 × 10 17cm− 3while transparency and crystallinity remain unaffected. By temperature‐dependent Hall‐effect measurements, a carrier freeze out is observed and the binding energy of the selenium dopant is determined. The long‐term electrical stability in combination withAl 2 O 3cappings is significantly improved compared to undoped or oxygen doped CuI. However, for selenium contents exceeding x ( Se ) = 1 at.%, major crystalline changes are observed that are presumably correlated to a phase transformation. Transmission and electrical measurements suggest that the solubility limit of Se in CuI is about 1 at.% since a degradation of the transparency and decreasing free hole densities are observed for Se contents exceeding 1 at.%. Hence, the doping limit for Se in CuI corresponds to ≈ 1 at.%.