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Current‐Induced Complementary Doping to Graphene from Hydrogen Silsesquioxane Passivation Layer
Author(s) -
Wang Zhongwang,
Yuan Yahua,
Liu Xiaochi,
Mizuta Hiroshi,
Sun Jian
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100151
Subject(s) - hydrogen silsesquioxane , materials science , graphene , doping , nanotechnology , annealing (glass) , dopant , passivation , optoelectronics , silicon , resist , fabrication , hydrogen , electron beam lithography , layer (electronics) , chemistry , composite material , alternative medicine , pathology , medicine , organic chemistry
Hydrogen silsesquioxane (HSQ) is a high‐resolution negative‐tone e‐beam resist. Apart from that, it also frequently uses a complementary dopant to 2D materials. So far, most of the studies on an HSQ complementary doping process have been performed by electron beam exposure during the device fabrication. Doping induced by post‐treatment after device fabrication has not been investigated. Herein, current annealing is reported as an easy access to induce controlled complementary doping from the capping HSQ to the graphene. Joule heating caused by the current is able to break siliconhydrogen and siliconoxygen bonds in HSQ. Subsequently, hydrogen and oxygen atoms generated are trapped at the HSQ–graphene interface, therefore, n‐type and p‐type doping graphene, respectively. The doping polarity and strength can be controlled by current strength and annealing duration.