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Study of Spin Pumping through α‐Sn Thin Films
Author(s) -
Gladczuk Łukasz,
Gladczuk Leszek,
Dluzewski Piotr,
van der Laan Gerrit,
Hesjedal Thorsten
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100137
Subject(s) - topological insulator , spin pumping , thin film , materials science , tin , dirac (video compression format) , topology (electrical circuits) , spin (aerodynamics) , condensed matter physics , epitaxy , ferromagnetism , nanotechnology , physics , spin polarization , quantum mechanics , spin hall effect , mathematics , metallurgy , electron , thermodynamics , combinatorics , layer (electronics) , neutrino
Elemental tin in the α‐phase is an intriguing member of the family of topological quantum materials. In thin films, with decreasing thickness, α‐Sn transforms from a 3D topological Dirac semimetal (TDS) to a 2D topological insulator (TI). Getting access to and making use of its topological surface states is challenging and requires interfacing to a magnetically ordered material. Herein, the successful epitaxial growth of α‐Sn thin films on Co, forming the core of a spin‐valve structure, is reported. Time‐ and element‐selective ferromagnetic resonance experiments are conducted to investigate the presence of spin pumping through the spin‐valve structure. A rigorous statistical analysis of the experimental data using a model based on the Landau–Lifshitz–Gilbert–Slonczewski equation is applied. A strong exchange coupling contribution is found, however no unambiguous proof for spin pumping. Nevertheless, the incorporation of α‐Sn into a spin valve remains a promising approach given its simplicity as an elemental TI and its room‐temperature application potential.