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Multistate Magnetic Domain Wall Devices for Neuromorphic Computing
Author(s) -
Sbiaa Rachid
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100125
Subject(s) - neuromorphic engineering , memristor , von neumann architecture , domain (mathematical analysis) , computer science , focus (optics) , computer architecture , tunnel magnetoresistance , synapse , neuroscience , nanotechnology , artificial neural network , electronic engineering , materials science , artificial intelligence , engineering , physics , biology , mathematics , layer (electronics) , mathematical analysis , optics , operating system
In recent years, neuromorphic computing has been intensively investigated, to take over the conventional or von Neumann scheme. Herein, the advantages of memristors as neurons and synapses are discussed. After a brief introduction to biological neurons and synapses, focus is put on spin‐based devices, including magnetic tunnel junction (MTJ) and domain wall devices. Certain materials and device designs aim at mimicking synapses’ functionality, whereas others gather both neurons and synapses. The advancements in spin‐based memory applications are of great advantage for neuromorphic computing and their implementation is presented herein.