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Effect of Light and Heat on Polymer‐Based Resistive Random Access Memory
Author(s) -
Mahato Bipul Kumar,
Medwal Rohit,
Deen Ghulam Roshan,
Piramanayagam S. N.,
Rawat Rajdeep Singh
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100050
Subject(s) - resistive random access memory , materials science , optoelectronics , thermal conduction , electric field , resistive touchscreen , space charge , stack (abstract data type) , dissociation (chemistry) , voltage , composite material , electrical engineering , electron , chemistry , physics , computer science , engineering , quantum mechanics , programming language
Highly repeatable, photosensitive nonvolatile resistive random access memory (ReRAM) made of a Si/SiO 2 /Cu/PRPC/Ta stack with a photoresponsive polymer composite (PRPC) as the active medium is presented. The device shows errorless bipolar resistive switching with more than 100 cycles repeatability and stable SET and RESET voltages. It changes its resistive states in response to white light and recovers completely after removal of the light source. It also changes its state in response to heat and recovers randomly after the removal of the heat source. The phenomenon is explained by valance charge transfer along with a space‐charge‐limited conduction (SCLC) mechanism. The initial state of the device is low resistance state (LRS) because of electric‐field‐induced formation of valance charge transfer states. It switches to a high resistance state (HRS) due to electric‐field‐induced dissociation of the charge transfer states.