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Optoelectronic Inactivity of Dislocations in Cu(In,Ga)Se 2 Thin Films
Author(s) -
Abou-Ras Daniel,
Nikolaeva Aleksandra,
Krause Maximilian,
Korte Lars,
Stange Helena,
Mainz Roland,
Simsek Sanli Ekin,
van Aken Peter A.,
Sugaya Takeyoshi,
Nishinaga Jiro
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100042
Subject(s) - copper indium gallium selenide solar cells , materials science , optoelectronics , grain boundary , stacking , dislocation , crystallite , thin film , planar , thin film solar cell , crystallography , solar cell , nanotechnology , composite material , metallurgy , microstructure , chemistry , computer graphics (images) , organic chemistry , computer science
High‐efficiency Cu(In,Ga)Se 2 (CIGS) thin‐film solar cells are based on polycrystalline CIGS absorber layers, which contain grain boundaries, stacking faults, and dislocations. While planar defects in CIGS layers have been investigated extensively, little is still known about the impact of dislocations on optoelectronic properties of CIGS absorbers. Herein, evidence for an optoelectronic inactivity of dislocations in these thin films is given, in contrast to the situation at grain boundaries. This unique behavior is explained by the extensive elemental redistribution detected around dislocation cores, which is connected with the dislocation strain field, probably leading to a shift of defect states toward the band edges.