Premium
Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films
Author(s) -
Mittmann Terence,
Szyjka Thomas,
Alex Hsain,
Istrate Marian Cosmin,
Lomenzo Patrick D.,
Baumgarten Lutz,
Müller Martina,
Jones Jacob L.,
Pintilie Lucian,
Mikolajick Thomas,
Schroeder Uwe
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100012
Subject(s) - ferroelectricity , materials science , orthorhombic crystal system , electrode , oxide , iridium , annealing (glass) , monoclinic crystal system , zirconium , oxygen , inorganic chemistry , optoelectronics , dielectric , crystal structure , crystallography , metallurgy , chemistry , biochemistry , organic chemistry , catalysis
Thin film metal–ferroelectric–metal capacitors with an equal mixture of hafnium oxide and zirconium oxide as the ferroelectric material are fabricated using iridium oxide as the electrode material. The influence of the oxygen concentration in the electrodes during crystallization anneal on the ferroelectric properties is characterized by electrical, chemical, and structural methods. Forming gas, O 2 , and N 2 annealing atmospheres significantly change the ferroelectric performance. The use of oxygen‐deficient electrodes improves the stabilization of the ferroelectric orthorhombic phase and reduces the wake‐up effect. It is found that oxygen‐rich electrodes supply oxygen during anneal and reduce the amount of oxygen vacancies, but the nonferroelectric monoclinic phase is stabilized with a negative impact on the ferroelectric properties.