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Heteroepitaxial Hexagonal (00.1) CuFeO 2 Thin Film Grown on Cubic (001) SrTiO 3 Substrate Through Translational and Rotational Domain Matching
Author(s) -
Luo Sijun,
Harrington George F.,
Wu Kuan-Ting,
Pergolesi Daniele,
Lippert Thomas
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202100002
Subject(s) - delafossite , materials science , thin film , heterojunction , substrate (aquarium) , condensed matter physics , epitaxy , hexagonal crystal system , band gap , optics , crystallography , oxide , optoelectronics , nanotechnology , chemistry , physics , oceanography , layer (electronics) , geology , metallurgy
Heteroepitaxy of complex oxide thin films is a significant challenge when a large mismatch in the lattice parameters (>8%) and difference in the crystallographic symmetry coexist between the film and substrate. Herein, the heteroepitaxial growth of a hexagonal delafossite CuFeO 2 thin film with (00.1) orientation on a cubic perovskite (001) SrTiO 3 substrate through translational and rotational domain matching epitaxy is reported. The rotational in‐plane domain orientation relationships are CuFeO 2 [11.0]//SrTiO 3 [110] and CuFeO 2 [2 1 ¯ .0]//SrTiO 3 [110] with about 10% in‐plane lattice mismatch. The 14.8 nm‐thick (00.1) CuFeO 2 thin film shows high‐crystalline quality with a full width at half maximum of rocking curve of about 0.24° and exhibits a possible indirect optical bandgap of 1.43 eV or direct optical bandgap of 1.94 eV. Herein, not only a model system demonstrating translational and rotational domain matching heteroepitaxy of complex oxides is reported, but also a way to thin‐film heterostructures integrating hexagonal delafossite with cubic perovskite materials for functional oxide devices is opened.