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Fully Printed Inverters using Metal‐Oxide Semiconductor and Graphene Passives on Flexible Substrates
Author(s) -
Singaraju Surya Abhishek,
Marques Gabriel Cadilha,
Gruber Patric,
Kruk Robert,
Hahn Horst,
Breitung Ben,
Aghassi-Hagmann Jasmin
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202070036
Subject(s) - materials science , graphene , optoelectronics , transistor , oxide , polyimide , resistor , flexible electronics , semiconductor , nanotechnology , layer (electronics) , electrical engineering , voltage , metallurgy , engineering
The cover image (referring to article number 2000252 by Surya Abhishek Singaraju, Jasmin Aghassi‐Hagmann, and co‐workers) depicts fully printed inverters in a transistor‐resistor logic on flexible polyimide substrates. Polycrystalline indium oxide is printed as the active semiconducting material whereas graphene is printed as the passive structures. The authors observed the devices to be highly stable in electrical performance while withstanding tensile strain of more than 2%. A polymer electrolyte is used as gate insulator and PEDOT:PSS as top gate. The devices are even subjected to stretching in order to substantiate the surface corrugation of the printed films.