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Solution Processed Organic Transistors on Polymeric Gate Dielectric with Mobility Exceeding 15 cm 2 V −1 s −1
Author(s) -
Bilgaiyan Anubha,
Cho Seung-Il,
Abiko Miho,
Watanabe Kaori,
Mizukami Makoto
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202070035
Subject(s) - thin film transistor , materials science , backplane , organic semiconductor , optoelectronics , electronic circuit , transistor , oled , electron mobility , dielectric , gate dielectric , electrical engineering , nanotechnology , voltage , engineering , layer (electronics)
Highly crystalline and solution‐processability properties of the new organic semiconductor 6,6′ bis (trans‐4‐pentylcyclohexyl)‐dinaphtho[2,1‐b:2′,1′‐f]thieno[3,2‐b]thiophene (5H‐21DNTT) enable it to realize high‐mobility, low‐voltage and reliable organic thin film transistor (OTFT) operation. The cover image, referring to article number 2000156 by Makoto Mizukami and co‐workers, illustrates the 5H‐21DNTT structure, the basic OTFT structure, and the future applicability of the high‐performance 5H‐21DNTT OTFT for flexible, light‐weight, printable and large‐area electronic circuits comprising many 5H‐21DNTT OTFTs – for applications such as RFID tags, driving and switching circuits for OLED backplane, and logic circuits, fabricated via a low‐temperature solution process.